Method of forming an encapsulated conductive pillar
US6537912B1 · kind B1 · utility
37Cited by
16References
57Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 25, 2000 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Aug 25, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an encapsulated 3-D conductive pillar and a method of formation thereof. Significant economic savings are achieved by filling a substantial portion of the volume of the pillar with a lesser expensive conductive material. Additionally, the encapsulated 3-D conductor pillar forms a suitable unreactive, oxygen-stable electrode for use with high-dielectric constant (HDC) materials as the encapsulating barrier layer metal provides a stable conductive interface between the HDC material and the encapsulated conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.