Semiconductor device and method of manufacturing the same
US6538271B2 · kind B2 · utility
1Cited by
8References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 6, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Jun 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si—H bond and has an Si—H density per unit area of 1×1015 cm−2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.