Method and apparatus for dimension measurement of a pattern formed by lithographic exposure tools
US6538753B2 · kind B2 · utility
4Cited by
19References
60Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | May 22, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/02
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Increased accuracy of measurement of variation of a critical dimension is achieved through measurement of area of a test mark by detection of intensity of radiation such as broadband light with which at least a portion of a test mark is imaged. The test mark is preferably formed by partial lithographic exposures of overlapping features, preferably lines having a width approximating a critical dimension of interest and at a shallow angle to each other such that the test mark has the shape of a parallelogram or rhombus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.