Read methods for magneto-resistive device having soft reference layer
US6538917B1 · kind B1 · utility
29Cited by
6References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Sep 25, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magneto-resistive device includes data and reference layers having different coercivities. Each layer has a magnetization that can be oriented in either of two directions. The memory device may be read by temporarily setting the magnetization of the reference layer to a known orientation, and determining a resistance state of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.