Chromium adhesion layer for copper vias in low-k technology

US6539625B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• Infineon Technologies AG · DE

Inventors

• Brett H. Engel · Fishkill, US
• Mark Hoinkis · Fishkill, US
• John A. Miller · North Palm Beach, US
• Soon-Cheon Seo · White Plains, US
• Yun-Yu Wang · Poughquag, US
• Kwong Hon Wong · Wappingers Falls, US

Key dates

• Filing date: Jan 11, 2001
• Grant date: Apr 1, 2003
• Expiry date: Apr 19, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49165
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In integrated circuits having copper interconnect and low-k interlayer dielectrics, a problem of open circuits after heat treatment was discovered and solved by the use of a first liner layer of Cr, followed by a conformal liner layer of CVD TiN, followed in turn by a final liner layer of Ta or TaN, thus improving adhesion between the via and the underlying copper layer while maintaining low resistance.