Engineered high dielectric constant oxide and oxynitride heterostructure gate dielectrics by an atomic beam deposition technique
US6541079B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1999 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Oct 25, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/081
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a layer of oxide or oxynitride upon a substrate including first placing a substrate having an upper surface and a lower surface in a high vacuum chamber and then exposing the upper surface to a beam of atoms or molecules, or both, of oxygen or nitrogen or a combination of same at a temperature sufficient to form a reacted layer on the upper surface of said substrate wherein said layer has a chemical composition different from the chemical composition of said substrate. The reacted upper layer is then exposed simultaneously in the chamber to atomic or molecular beams of oxygen, nitrogen or both and to a beam of metal atoms or metal molecules selected from the group consisting of Al, Si, Zr, La, Y, Sc, Sr, Ba, Ti, Ta, W, Cr, Zr, Ca, Mg, Be, Pr, Nd and Hf to form a metal oxide, a metal nitride or a metal oxynitride layer in said layer. Another option is to expose the upper surface of the substrate simultaneously in the chamber to atomic or molecular beams of oxygen, nitrogen or both and to a beam of metal atoms or meal molecules selected from the group consisting of Al, Si, Zr, La Y, Sc, Sr, Ba, Ti, Ta, W, Cr, Zr, Ca, Mg, Be, Pr, Nd and Hf to form a metal oxide, a …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.