Semiconductor light-emitting device and manufacturing method thereof
US6541293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2002 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Jun 3, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2 >0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.