Method for limiting divot formation in post shallow trench isolation processes

US6541351B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Peter H. Bartlau · South Burlington, US
• Marc W. Cantell · Enosburg Falls, US
• Jerome B. Lasky · South Burlington, US
• James D. Weil · Underhill, US

Key dates

• Filing date: Nov 20, 2001
• Grant date: Apr 1, 2003
• Expiry date: Nov 20, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76283
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for limiting divot formation in shallow trench isolation structures. The method includes: providing a trench formed in a silicon region with a deposited oxide; oxidizing a top layer of the silicon region to form a layer of thermal oxide on top of the silicon region; and selectively etching the thermal oxide with respect to the deposited oxide.