Method of making a graded grown, high quality oxide layer for a semiconductor device
US6541394B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2000 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Apr 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making an oxide layer on a silicon substrate produces an oxide layer including graded portions with greatly reduced stress. The method includes growing a first oxide portion over a substrate by upwardly ramping the substrate to a first temperature lower than a SiO2 viscoelastic temperature. Thereafter a second oxide portion is grown between the first oxide portion and the silicon substrate by exposing the silicon substrate to an oxidizing ambient at a second temperature higher than the SiO2 viscoelastic temperature. The second oxide portion may have a thickness in a range of about 25 to 50% of a total thickness of the graded oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.