Wafer pretreatment to decrease rate of silicon dioxide deposition on silicon nitride compared to silicon substrate
US6541401B1 · kind B1 · utility
47Cited by
3References
27Claims
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Key dates
| Filing date | Jul 31, 2000 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Jul 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31051
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of decreasing the growth rate of silicon dioxide films on a silicon nitride pad on a silicon wafer wherein the decrease in growth rate of the silicon dioxide results in a self-planarized film on the wafer is provided. Also provided is a method of pretreating said silicon wafer wherein said wafer is contacted with a chemical, such as hydrogen peroxide, isopropyl alcohol or acetone and air-dried prior to silicon dioxide deposition. Additionally, selective oxidation sub-atmospheric chemical vapor deposition (SELOX SACVD) uses an ozone-activated tetraethylorthosilicate process to deposit said silicon dioxide on said wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.