Inventor · Lafayette, CO, US

Scott Brad Herner

124Patents
15h-index
36Co-inventors
86Inventor score

Filing activity: Sep 13, 1999 → Jul 9, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8088688B1 p+ polysilicon material on aluminum for non-volatile memory device and method Electricity 94 Active
US8168506B2 On/off ratio for non-volatile memory device and method Electricity 79 Active
US8394670B2 Vertical diodes for non-volatile memory device Electricity 76 Active
US8659003B2 Disturb-resistant non-volatile memory device and method Electricity 60 Active
US10431596B2 Staggered word line architecture for reduced disturb in 3-dimensional NOR memory arrays Electricity 59 Active
US8187945B2 Method for obtaining smooth, continuous silver film Electricity 59 Active
US8198144B2 Pillar structure for memory device and method Electricity 59 Active
US8258020B2 Interconnects for stacked non-volatile memory device and method Electricity 58 Active
US10622377B2 3-dimensional NOR memory array with very fine pitch: device and method Electricity 52 Active
US6429126B1 Reduced fluorine contamination for tungsten CVD Electricity 47 Expired
US6541401B1 Wafer pretreatment to decrease rate of silicon dioxide deposition on silicon nitride compared to silicon substrate Electricity 47 Expired
US8399307B2 Interconnects for stacked non-volatile memory device and method Electricity 40 Active
US8993397B2 Pillar structure for memory device and method Electricity 21 Active
US10608011B2 3-dimensional NOR memory array architecture and methods for fabrication thereof Electricity 21 Active
US6635556B1 Method of preventing autodoping Emerging Cross-Sectional Technologies 19 Expired
US8426306B1 Three dimension programmable resistive random accessed memory array with shared bitline and method Physics 14 Active
US6303480A Silicon layer to improve plug filling by CVD Electricity 14 Expired
US8404553B2 Disturb-resistant non-volatile memory device and method Electricity 10 Active
US6639312B2 Dummy wafers and methods for making the same Emerging Cross-Sectional Technologies 10 Expired
US8697533B2 Method for obtaining smooth, continuous silver film Electricity 9 Active
US9252191B2 Seed layer for a p+ silicon germanium material for a non-volatile memory device and method Electricity 7 Active
US11309331B2 3-dimensional NOR memory array architecture and methods for fabrication thereof Electricity 6 Active
US9246089B2 Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states Physics 5 Active
US8450209B2 p+ Polysilicon material on aluminum for non-volatile memory device and method Electricity 5 Active
US8815696B1 Disturb-resistant non-volatile memory device using via-fill and etchback technique Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.