Laser-excited detection of defective semiconductor device
US6541987B1 · kind B1 · utility
8Cited by
3References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 30, 1999 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Aug 30, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/311
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Useful in connection with IC testing at a post-manufacture stage, an example embodiment is directed to use of photoluminescence PL spectroscopy for detecting contaminants in circuit materials. According to one example embodiment, a system includes a test fixture arranged to secure a die and includes a laser-scanning microscope. This system is arranged to direct a laser beam at a target material in the die and receives a secondary PL component remitted from the target circuit material. A contaminant in the target material is indicated by the reception of the secondary PL component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.