Patent · US Expired

Photomask set for photolithographic operation

US6544695B2 · kind B2 · utility

4Cited by
1References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 11, 2001
Grant dateApr 8, 2003
Priority date
Expiry dateJul 11, 2021

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/26
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photomask set and a photolithographic operation suitable for forming a desired pattern on a photoresist layer. The photomask set includes a plurality of photomasks each having a different pattern thereon. To form an overall pattern on the photoresist layer, each photomask is used in turn in a multi-exposure operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.