Method to improve accuracy of model-based optical proximity correction
US6544699B1 · kind B1 · utility
17Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2001 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Jul 13, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure describes an exemplary method of improving the accuracy of model-based optical proximity correction (OPC). This method can include identifying best exposure dose and best focus conditions, measuring critical dimensions at the identified conditions, measuring critical dimensions at variations from the identified conditions, and obtaining critical dimension information by averaging measured critical dimensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.