Method of forming hemisphere grained silicon on a template on a semiconductor work object
US6544842B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 1999 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | May 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
The present invention provides a method of preparing a surface of a silicon wafer for formation of HSG structures. The method contemplates providing a wafer having at least one HSG template comprising polysilicon formed in BPSG, the HSG template being covered by silicon dioxide. The wafer is treated with a cleaning agent to clean the surface of the wafer. Next, the wafer is treated with a conditioning agent. The conditioning agent removes native oxide from the HSG template without excessively etching structural BPSG. Preferably, the conditioning agent also removes a thin layer of polysilicon on the HSG template. The wafer is then transferred to a process chamber for HSG formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.