Electromagnetic field generator and method of operation
US6545580B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1998 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Sep 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electromagnetic field generator and method of operation for ion beam deposition of magnetic thin-film materials is presented. A combination of open frame electromagnetic field generator elements provides precise control of magnetic field directionality. This control enables deposition of oriented magnetic films with minimal directionality error. The magnetic field direction may be oriented to enable the deposition of alternating layers of directionally oriented magnetic films. An open frame element reduces the weight of the electromagnetic field generator while truncated corners reduce diagonal clearance that may be required in a vacuum chamber. An open frame design also enables the electromagnetic field generator to surround and thus remain clear of the active deposition area; the electromagnetic field generator can thus be shielded from accumulation of sputtered material. Shielding from accumulation of sputter material reduces maintenance requirements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.