Method of writing to scalable magnetoresistance random access memory element
US6545906B1 · kind B1 · utility
303Cited by
3References
31Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 16, 2001 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Oct 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.