Mark Deherrera
25Patents
11h-index
32Co-inventors
75Inventor score
Filing activity: Dec 17, 1999 → Mar 19, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6545906B1 | Method of writing to scalable magnetoresistance random access memory element | Physics | 303 | Expired |
| US6331943A | MTJ MRAM series-parallel architecture | Physics | 238 | Expired |
| US6233172A | Magnetic element with dual magnetic states and fabrication method thereof | Electricity | 153 | Expired |
| US6835423B2 | Method of fabricating a magnetic element with insulating veils | Emerging Cross-Sectional Technologies | 134 | Expired |
| US6544801B1 | Method of fabricating thermally stable MTJ cell and apparatus | Electricity | 66 | Expired |
| US6365419B1 | High density MRAM cell array | Electricity | 51 | Expired |
| US6430084B1 | Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer | Electricity | 50 | Expired |
| US6909631B2 | MRAM and methods for reading the MRAM | Physics | 30 | Expired |
| US6518071B1 | Magnetoresistive random access memory device and method of fabrication thereof | Electricity | 25 | Expired |
| US6784510B1 | Magnetoresistive random access memory device structures | Performing Operations; Transporting | 24 | Expired |
| US6760266B2 | Sense amplifier and method for performing a read operation in a MRAM | Physics | 17 | Expired |
| US6888743B2 | MRAM architecture | Physics | 10 | Expired |
| US6956763B2 | MRAM element and methods for writing the MRAM element | Physics | 9 | Expired |
| US6885074B2 | Cladded conductor for use in a magnetoelectronics device and method for fabricating the same | Electricity | 8 | Expired |
| US7158407B2 | Triple pulse method for MRAM toggle bit characterization | Physics | 6 | Expired |
| US6890770B2 | Magnetoresistive random access memory device structures and methods for fabricating the same | Performing Operations; Transporting | 6 | Expired |
| US7105363B2 | Cladded conductor for use in a magnetoelectronics device and method for fabricating the same | Electricity | 5 | Expired |
| US7184300B2 | Magneto resistance random access memory element | Physics | 5 | Expired |
| US7088608B2 | Reducing power consumption during MRAM writes using multiple current levels | Physics | 4 | Expired |
| US7333360B2 | Apparatus for pulse testing a MRAM device and method therefore | Physics | 2 | Expired |
| US6912107B2 | Magnetic element with insulating veils and fabricating method thereof | Emerging Cross-Sectional Technologies | 2 | Expired |
| US9543041B2 | Configuration and testing for magnetoresistive memory to ensure long term continuous operation | Physics | 2 | Active |
| US7447060B2 | MRAM Memory conditioning | Electricity | 0 | Active |
| US10923170B2 | Determining bias configuration for write operations in memory to improve device performance during normal operation as well as to improve the effectiveness of testing routines | Physics | 0 | Active |
| US10262713B2 | Determining bias configuration for write operations in memory to improve device performance during normal operation as well as to improve the effectiveness of testing routines | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.