Post clean treatment
US6546939B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 3, 2000 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Jan 22, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/24
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper or aluminum surface comprises applying the above composition to the copper or aluminum surface, and polishing the surface in the presence of the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.