Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber
US6548112B1 · kind B1 · utility
44Cited by
12References
10Claims
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Key dates
| Filing date | Nov 18, 1999 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Nov 18, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4486
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.