Method for forming and patterning film
US6548386B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2000 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | May 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metallic films are formed on a silicon substrate on which an insulation film and a conductive portion are exposed. The metallic films include a first metallic film directly contacting the insulation film and the conductive portion and a second metallic film disposed on the first metallic film as a stress adjustment film to control a stress at an interface between the first metallic film and the underlying member. Accordingly, an adhesion between the first metallic film and the insulation film can be controlled to be smaller than that between the first metallic film and the conductive portion. Then, the metallic film is removed from the insulation film by an adhesive sheet selectively while remaining on the conductive portion. As a result, the metallic film can be patterned stably and readily at low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.