Plasma ashing process
US6548416B2 · kind B2 · utility
52Cited by
15References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2001 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Jul 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3342
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and/or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.