Compound, high-K, gate and capacitor insulator layer
US6548854B1 · kind B1 · utility
18Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1997 |
| Grant date | Apr 15, 2003 |
| Priority date | — |
| Expiry date | Dec 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate or capacitor insulator structure using a first grown oxide layer, a high-k dielectric material on the grown oxide layer, and a deposited oxide layer on the high-k dielectric material. The deposited oxide layer is preferably a densified deposited oxide layer. A conducting layer, such as a gate or capacitor plate, may overlay the densified oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.