Method for treating a silicon substrate, by nitriding, to form a thin insulating layer
US6551698B1 · kind B1 · utility
1Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2001 |
| Grant date | Apr 22, 2003 |
| Priority date | — |
| Expiry date | Apr 4, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method for preparing a silicon substrate to form a thin electric insulating layer (24), characterized in that it comprises:a deoxidation step of at least one part of the silicon substrate (10), thena heat treatment step of the substrate at a temperature of 750° C. or less, the heat treatment being conducted in a NO-containing atmosphere at a pressure of 5.103 Pa (50 mBr) or less, in order to form a layer of silicon oxynitride (22) on the substrate. Use for the production of EPROM and DRAM memories.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.