Patent · US Expired

Method of reading electrical fuses/antifuses

US6552549B1 · kind B1 · utility

6Cited by

4References

4Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Robert Kaiser · Kaufering, DE
Jürgen Lindolf · Friedberg, DE
Helmut Schneider · Hersbruck, DE

Key dates

Filing date	May 29, 2001
Grant date	Apr 22, 2003
Priority date	—
Expiry date	May 29, 2021

Classification

Technology area (CPC G)Physics
CPC primaryG11C17/18
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Electrical fuses/antifuses in a semiconductor memory configuration, such as in particular a DRAM, are read, instead of with the previously conventional internal voltage, with the voltage that defines the high potential of the bit lines of a memory cell array in the semiconductor memory. The high potential of the bit lines is defined by a voltage that is reduced relative to the internal voltage of the semiconductor memory.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.