Dry isotropic removal of inorganic anti-reflective coating after poly gate etching
US6555397B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2000 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Nov 17, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various methods of fabricating a conductor structure are provided. In one aspect, a method of fabricating a conductor structure on a first workpiece is provided. A silicon film is formed on the first workpiece. An anti-reflective coating is formed on the silicon film. A mask is formed on a first portion of the anti-reflective coating, while a second portion thereof is left unmasked. The second portion of the anti-reflective coating and the silicon film are etched. The mask is removed, and the anti-reflective coating is removed by isotropic plasma etching. Use of isotropic etching for anti-reflective coating removal eliminates thermal shock associated with heated acid bath anti-reflective coating removal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.