Scanning electron microscope
US6555819B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2000 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Oct 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/04756
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Image observation at high resolution is realized and irregularity information of a sample is obtained.The reflected electrons 12a emitted in a direction at a small angle with the surface of the sample 8 are detected by the detectors 10a and 10b arranged on the side of the electron source 1 of the magnetic field leakage type object lens 7 and a sample image is formed. Irregularity information of the sample is obtained from the effects of light and shade appearing in the sample image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.