Self-aligned magnetic clad write line and its method of formation
US6555858B1 · kind B1 · utility
130Cited by
8References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2000 |
| Grant date | Apr 29, 2003 |
| Priority date | — |
| Expiry date | Dec 19, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A self-aligned magnetic clad bit line structure (274) for a magnetic memory element (240a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure (274) extends within a trench (258) and includes a conductive material (250), magnetic cladding sidewalls (262) and a magnetic cladding cap (252). The magnetic cladding sidewalls (262) at least partially surround the conductive material (264) and the magnetic cladding cap (252) is substantially recessed within the trench with respect to the top of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.