Eric D. Luckowski
9Patents
6h-index
15Co-inventors
56Inventor score
Filing activity: Nov 15, 2000 → Mar 11, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6461914B1 | Process for making a MIM capacitor | Electricity | 147 | Expired |
| US6555858B1 | Self-aligned magnetic clad write line and its method of formation | Performing Operations; Transporting | 130 | Expired |
| US6790719B1 | Process for forming dual metal gate structures | Electricity | 46 | Expired |
| US8309419B2 | CMOS integration with metal gate and doped high-K oxides | Electricity | 22 | Active |
| US6916669B2 | Self-aligned magnetic clad write line and its method of formation | Performing Operations; Transporting | 16 | Expired |
| US7579282B2 | Method for removing metal foot during high-k dielectric/metal gate etching | Electricity | 9 | Active |
| US8415212B2 | Method of enhancing photoresist adhesion to rare earth oxides | Electricity | 1 | Active |
| US7751177B2 | Thin-film capacitor with a field modification layer | Electricity | 0 | Active |
| US7534693B2 | Thin-film capacitor with a field modification layer and methods for forming the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.