Method of manufacturing a capacitor in a semiconductor device
US6559000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of manufacturing a capacitor in a semiconductor device. The present invention forms a Ru film as a lower electrode of the capacitor in which a Ta2O5 film is used as a dielectric film by introducing Ru of a raw material, oxygen and NH3 in order to reduce oxygen or a NH3 plasma process as a subsequent process is performed in order to remove oxygen existing on the surface of the Ru film. Therefore, the present invention can prevent oxidization of a diffusion prevention film due to oxygen existing in a Ru film during annealing process performed after deposition of a Ta2O5 film and thus improve reliability of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.