Doped silicon deposition process in resistively heated single wafer chamber

US6559039B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Shulin Wang · Campbell, US
• Lee Luo · Fremont, US
• Steven Chen · Fremont, US
• Errol Antonio C. Sanchez · Tracy, US
• Xianzhi Tao · Palo Alto, US
• Zoran Dragojlovic · San Jose, US
• Li Fu · Santa Clara, US

Key dates

• Filing date: May 15, 2001
• Grant date: May 6, 2003
• Expiry date: May 15, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for depositing doped polycrystalline or amorphous silicon film. The method includes placing a substrate onto a susceptor. The susceptor includes a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater. The susceptor is located in the process chamber such that the process chamber has a top portion above the susceptor and a bottom portion below the susceptor. The method further includes heating the susceptor. The method further includes providing a process gas mix into the process chamber through a shower head located on the susceptor. The process gas mix includes a silicon source gas, a dopant gas, and a carrier gas. The carrier gas includes nitrogen. The method further includes forming the doped silicon film from the silicon source gas.