Lee Luo
32Patents
18h-index
64Co-inventors
80Inventor score
Filing activity: Jul 12, 1996 → Aug 20, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5846332A | Thermally floating pedestal collar in a chemical vapor deposition chamber | Electricity | 782 | Expired |
| US6129044A | Apparatus for substrate processing with improved throughput and yield | Electricity | 546 | Expired |
| US6210485A | Chemical vapor deposition vaporizer | Chemistry; Metallurgy | 382 | Expired |
| US6189482A | High temperature, high flow rate chemical vapor deposition apparatus and related methods | Electricity | 340 | Expired |
| US5993916A | Method for substrate processing with improved throughput and yield | Electricity | 269 | Expired |
| US5968379A | High temperature ceramic heater assembly with RF capability and related methods | Electricity | 179 | Expired |
| US6833161B2 | Cyclical deposition of tungsten nitride for metal oxide gate electrode | Electricity | 121 | Expired |
| US6051286A | High temperature, high deposition rate process and apparatus for depositing titanium layers | Electricity | 109 | Expired |
| US5983906A | Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment | Emerging Cross-Sectional Technologies | 90 | Expired |
| US6392290B1 | Vertical structure for semiconductor wafer-level chip scale packages | Electricity | 89 | Expired |
| US6713127B2 | Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD | Chemistry; Metallurgy | 54 | Expired |
| US6949203B2 | System level in-situ integrated dielectric etch process particularly useful for copper dual damascene | Electricity | 52 | Expired |
| US5964947A | Removable pumping channel liners within a chemical vapor deposition chamber | Electricity | 49 | Expired |
| US5994678A | Apparatus for ceramic pedestal and metal shaft assembly | Chemistry; Metallurgy | 49 | Expired |
| US7745329B2 | Tungsten nitride atomic layer deposition processes | Electricity | 30 | Active |
| US6270859A | Plasma treatment of titanium nitride formed by chemical vapor deposition | Electricity | 26 | Expired |
| US7115499B2 | Cyclical deposition of tungsten nitride for metal oxide gate electrode | Electricity | 24 | Expired |
| US6582522B2 | Emissivity-change-free pumping plate kit in a single wafer chamber | Chemistry; Metallurgy | 18 | Expired |
| US6500357B1 | System level in-situ integrated dielectric etch process particularly useful for copper dual damascene | Electricity | 17 | Expired |
| US6559039B2 | Doped silicon deposition process in resistively heated single wafer chamber | Electricity | 13 | Expired |
| US7429516B2 | Tungsten nitride atomic layer deposition processes | Electricity | 10 | Active |
| US7608300B2 | Methods and devices to reduce defects in dielectric stack structures | Chemistry; Metallurgy | 10 | Expired |
| US6077562A | Method for depositing barium strontium titanate | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6884464B2 | Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber | Electricity | 9 | Expired |
| US8336488B2 | Multi-station plasma reactor with multiple plasma regions | Electricity | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.