Process for forming fusible links
US6559042B2 · kind B2 · utility
16Cited by
13References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2001 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Jun 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming fusible links in an integrated circuit includes forming the fusible link in the last metallization layer. The process can be employed in the fabrication of integrated circuits employing copper metallization and low k dielectric materials. The fusible link is formed in the last metallization layer and may be formed simultaneously with the bonding pad areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.