Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures
US6559052B2 · kind B2 · utility
5Cited by
26References
29Claims
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Key dates
| Filing date | Jun 26, 2001 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Jun 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method and apparatus for depositing an amorphous silicon film on a substrate using a high density plasma chemical vapor deposition (HDP-CVD) technique is provided. The method generally comprises positioning a substrate in a processing chamber, introducing an inert gas into the processing chamber, introducing a silicon source gas into the processing chamber generating a high density plasma, and depositing the amorphous silicon film. The amorphous silicon film is deposited at a substrate temperature 500° C. or less. The amorphous silicon film may then be annealed to improve film properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.