Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor
US6559068B2 · kind B2 · utility
7Cited by
3References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2001 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Jun 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/049
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) is provided. Specifically, the present invention provides a method for applying an oxide layer to a silicon carbide substrate so that the oxide-substrate interface of the resulting SiC MOSFET is improved. The method includes forming the oxide layer in the presence of metallic impurities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.