Process for the electrochemical oxidation of a semiconductor substrate
US6559069B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2002 |
| Grant date | May 6, 2003 |
| Priority date | — |
| Expiry date | Aug 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process for the electrochemical oxidation of a semiconductor substrate that has recesses, such as for example, capacitor trenches or mesopores, formed in a silicon surface region, self-limited oxide formation takes place. The end of this formation is reached as a function of the process parameters such as the doping of the silicon region, the applied voltage and the composition of the electrolyte used, as soon as either a predetermined maximum layer thickness of the formed oxide or a predetermined minimum residual silicon layer thickness between two adjacent recesses is reached. The self-limiting is achieved either as a result of the overall voltage applied over the silicon oxide layer, which has already formed, dropping or as a result of the space charge regions of adjacent recesses coming into contact with one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.