Chemical vapor deposition process for fabricating layered superlattice materials
US6562678B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 7, 2000 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Mar 7, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A first reactant gas is flowed into a CVD reaction chamber containing a heated integrated circuit substrate. The first reactant gas contains a first precursor compound or a plurality of first precursor compounds, and the first precursor compound or compounds decompose in the CVD reaction chamber to deposit a coating containing metal atoms on the heated integrated circuit substrate. The coating is treated by RTP. Thereafter, a second reactant gas is flowed into a CVD reaction chamber containing the heated substrate. The second reactant gas contains a second precursor compound or a plurality of second precursor compounds, which decompose in the CVD reaction chamber to deposit more metal atoms on the substrate. Heat for reaction and crystallization of the deposited metal atoms to form a thin film of layered superlattice material is provided by heating the substrate during CVD deposition, as well as by selected rapid thermal processing (“RTP”) and furnace annealing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.