Bit-line oxidation by removing ONO oxide prior to bit-line implant
US6562683B1 · kind B1 · utility
39Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Sep 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor structure includes forming a masking pattern on an ONO layer, wherein the ONO layer is on a semiconductor substrate, forming pocket regions in the substrate with the masking pattern as a doping mask, etching the ONO layer with the masking pattern as an etching mask forming residual oxide regions, etching the ONO layer with a buffered oxide etch or a plasma etch exposing regions of the substrate, and removing the mask and forming a bit-line oxide layer on the exposed regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.