Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content
US6562703B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2002 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Mar 13, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a relaxed silicon germanium layer with a high germanium content on a silicon substrate. The method comprises: depositing a single-crystal silicon (Si) buffer layer overlying the silicon substrate; depositing a layer of single-crystal silicon germanium (Si1−xGex) overlying the Si buffer layer having a thickness of 1000 to 5000 å; implanting the Si1−xGex layer with ionized molecular hydrogen (H2+) a projected range of approximately 100 to 300 å into the underlying Si buffer layer; optionally, implanting the Si1−xGex layer with a species selected such as boron, He, or Si; annealing; and, in response to the annealing, converting the Si1−xGex layer to a relaxed Si1−xGex layer. Optionally, after annealing, an additional layer of single-crystal Si1−xGex having a thickness of greater than 1000 å can be deposited overlying the relaxed layer of Si1−xGex.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.