System and method for printing semiconductor patterns using an optimized illumination and reticle
US6563566B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2001 |
| Grant date | May 13, 2003 |
| Priority date | — |
| Expiry date | Jan 29, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/705
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system and method is described for lithographically printing patterns on a semiconductor using combinations of illumination and mask patterns which are optimized together to produce the desired pattern. The method of optimizing both illumination and mask pattern allows the development of mask patterns that are not constrained by the geometry of the desired pattern to be printed. Thus, the method provides high quality images even when the desired printed patterns have critical dimensions that approach the resolution limits of a lithographic system. The resulting mask patterns using the method do not obviously correspond to the desired patterns to be printed. Such masks may include phase-shifting technology that use destructive interference to define dark areas of the image and are not constrained to conform to the desired printed pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.