Epitaxial wafer substantially free of grown-in defects
US6565649B2 · kind B2 · utility
4Cited by
29References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Jun 5, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1004
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is directed to an epitaxial wafer comprising a single crystal silicon substrate having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated silicon self-interstitial defects on the substrate surface upon which the epitaxial layer is deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.