Dark field trench in an alternating phase shift mask to avoid phase conflict
US6566020B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 27, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Jul 27, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist mask used in the fabrication of an integrated circuit is described. This mask can include a first portion having a phase characteristic; a second portion being located proximate the first portion and having the same phase characteristic as the first portion; and a segment disposed between the first portion and the second portion to prevent phase conflict between the first portion and the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.