Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step
US6566150B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2002 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Jun 17, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/0735
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.