Method for manufacturing gate in semiconductor device
US6566189B2 · kind B2 · utility
2Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Jul 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method for manufacturing a gate for semiconductor memory devices in which a TaON thin film is used as a gate dielectric film. The disclosed present invention comprises steps of forming a nitride thin film on a semiconductor substrate; forming an amorphous TaON thin film over the nitride films; subjecting the amorphous TaON thin film to effect a crystallization thereof; and forming a polysilicon film as an upper electrode over the crystallized TaON thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.