Method for manufacturing bonded wafer
US6566233B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Aug 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a bonded wafer, in which when a bonded wafer is manufactured using an ion implantation separation method, impurities attached in the ion implantation step can be removed effectively, and less failure called a void is generated on the bonding surface.Impurities such as particles or organic substances attached in ion implantation step (c) are removed using a physical removal method (d). The surface of a first wafer (1) subjected to impurities removal is closely contacted onto the surface of a second wafer (2) for heat treatment (e). The first wafer is separated in a thin-film form at a micro bubble layer (f).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.