Process for improving mechanical strength of layers of low k dielectric material
US6566244B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2002 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | May 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for selectively reinforcing portions of a low k dielectric material which comprises first forming a low k dielectric layer, then forming openings in the low k layer in portions of the low k layer needing reinforcement, and then filling the openings with reinforcing material, preferably reinforcing material having a higher Young's modulus of elasticity than the low k dielectric material. Such selective reinforcement of certain portions of low k dielectric material may comprise selectively reinforcing the low k dielectric material beneath the bonding pads, with reinforcing material. The low k dielectric material may be reinforced by openings in the low k dielectric material formed beneath portions of the low k dielectric layer where a capping layer will be formed over the low k dielectric material. Subsequent formation of the capping layer will simultaneously fill the openings with capping material, which may then also function as reinforcement material in the openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.