Carbon-containing interfacial layer for phase-change memory
US6566700B2 · kind B2 · utility
412Cited by
6References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 11, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Oct 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase-change memory cell may be formed with a carbon-containing interfacial layer that heats a phase-change material. By forming the phase-change material in contact, in one embodiment, with the carbon containing interfacial layer, the amount of heat that may be applied to the phase-change material, at a given current and temperature, may be increased. In some embodiments, the performance of the interfacial layer at high temperatures may be improved by using a wide band gap semiconductor material such as silicon carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.