Power MOSFET cell with a crossed bar shaped body contact area
US6566710B1 · kind B1 · utility
37Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2001 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Aug 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
The safe operating area of a high-voltage MOSFET, such as a lateral double-diffused MOS (LDMOS) transistor, is increased by using transistor cells with an X-shaped body contact region and four smaller source regions that adjoin the body contact region. The X-shaped body contact region lowers the parasitic base resistance of the transistor, thereby increasing the safe operating area of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.