Photo sensor in a photo diode on a semiconductor wafer
US6566722B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2002 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Jun 26, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A method of forming a photo sensor in a photo diode is provided. The photo diode is formed in a semiconductor wafer. The semiconductor wafer includes a substrate with a first conductive type, and an insulating layer surrounding the photo sensor. A first ion implantation process, utilizing dopants with a second conductive type, is performed to form a plurality of first doped regions in the surface of the photo sensor. A second ion implantation process, utilizing dopants with the second conductive type, is performed to form a second doped region in the surface of the photo sensor. The second doped region is overlapped with a portion of each of the first doped regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.