Semiconductor device and power converter using the same
US6566726B1 · kind B1 · utility
8Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2000 |
| Grant date | May 20, 2003 |
| Priority date | — |
| Expiry date | Mar 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M7/003
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To reduce the field intensity on the termination surface, almost not affecting the on-characteristic, a drift layer is made of two layers, an n-layer and n− layer, and a termination region is formed on the surface of the above n− layer. An impurity concentration ratio between the n− layer and the n-layer is less than 1:2, and the thickness of the n− layer is less than that of a source n+ layer. Reliability can be secured even in a high temperature operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.